ON SEMICONDUCTOR MJE182G Bipolar (BJT) Single Transistor, NPN, 80 V, 50 MHz, 1.5 W, 3 A, 12 hFE LensCoat LCH4XLDC 3200K Color Rendering Index 85

3200K Color Rendering Index 85 Illuminance 1200 lux at 3

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ON SEMICONDUCTOR MJE182G Bipolar (BJT) Single Transistor, NPN, 80 V, 50 MHz, 1.5 W, 3 A, 12 hFE LensCoat LCH4XLDC 3200K Color Rendering Index 85The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices. High DC current gain High current gain bandwidth Annular construction for low leakages Epoxy meets UL94V 0 flammability rating 100VDC Collector to base voltage (VCBO) 7V Emitter to base voltage (VEBO) 6A Peak collector current