MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES The cable extends from the

The cable extends from the host computer and provides another type A female connector up to 16

The transparent front panel allows you to check the level of the remaining cards at any time so you can anticipate when more cards need to be loaded

The curved design of a battery grip offers a comfortable and secure way in which to hold your DSLR

flexible UV-PVC window allows you to see the AF/IS/VR controls and the distance-scale window Features a custom hole that reveals the red dot

MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES The cable extends from theThe BC107A is a 45V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. Low power Collector base voltage(Vcbo = 50V) Emitter base voltage(Vebo = 6V) Applications Industrial Product details Power Dissipation Pd 600mW DC Collector Current 100mA Collector Emitter Voltage V(br)ceo 45V Transition Frequency ft 150MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current Gain hFE 110hFE No. of Pins