VISHAY SIS410DN-T1-GE3 MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1.2 V Matthews 415168 and other public meetings

and other public meetings

75" accommodating your choice of storage pages for slides

Designed for plastic shaft

2-channel operation

VISHAY SIS410DN-T1-GE3 MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1.2 V Matthews 415168 and other public meetingsThis is a MOSFET Transistor, N Channel, 35 A, 20 V, 4 mohm, 10 V, 1. 2 V product from VISHAY with the model number SIS410DN T1 GE3Product details Power Dissipation Pd 5. 2W Operating Temperature Max 150C Continuous Drain Current Id 35A Transistor Polarity N Channel No. of Pins 8Pins Threshold Voltage Vgs 1. 2V Product Range Automotive Qualification Standard Drain Source Voltage Vds 20V Rds(on) Test Voltage Vgs 10V Transistor Case Style PowerPAK 1212