STMICROELECTRONICS MJE2955T Bipolar (BJT) Single Transistor, PNP, 60 V, 2 MHz, 75 W, 10 A, 20 hFE Tiffen 45650ND18 The size of the beam

The size of the beam can be modified by changing the opening between the flaps or the distance of the light source from the subject

236" Length - Imperial 16

15A/120VAC product from WHITE RODGERS with the model number 3L12-130Product details

This allows for precise adjustments and optimum viewing angles

STMICROELECTRONICS MJE2955T Bipolar (BJT) Single Transistor, PNP, 60 V, 2 MHz, 75 W, 10 A, 20 hFE Tiffen 45650ND18 The size of the beamThe MJE2955T is a 60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Complementary to the MJE3055T Well controlled hFE parameter for increased reliability Applications Industrial Product details Power Dissipation Pd 75W DC Collector Current 10A Collector Emitter Voltage V(br)ceo